About the position
Postdoc (m/f/d)
Epitaxial growth and characterization of 2D (C-doped) h-BN films
Hexagonal BN (h-BN) is a two-dimensional (2D) large-band gap insulating material with many unusual properties that has recently attracted increasing attention. Its versatile potential in 2D electronics has been widely reported. It serves multiple roles, acting as an ultra-flat substrate for reducing charge fluctuations, a passivation layer, and as atomically thin tunnel barriers. Furthermore, h-BN can host defect centers acting as single photon emitters in both the visible and ultraviolet spectral ranges, which makes this material highly relevant for quantum optics.
To date, the vast majority of the experimental demonstrations on the exceptional properties of this material has been carried out using h-BN flakes mechanically exfoliated from bulk crystals, whereas integration into practical devices will ultimately require h-BN layers synthesized over a large-scale with a high degree of control, e.g., over doping which is known to be directly linked to the single photon emission observed in this material.