About the position
PhD student (f/d/m)
Epitaxial growth h-BN films on single crystal metal templates
Hexagonal BN (h-BN) is a two-dimensional (2D) large-band gap insulator with many unusual properties that has recently attracted increasing attention. Its versatile potential in 2D electronics has been widely reported. It plays multiple roles in van der Waals (vdW) heterostructures, acting as an ultra-flat substrate to reduce charge fluctuations, as a passivation and/or encapsulation layer, and as atomically thin tunnel barriers. To date, the vast majority of experimental demonstrations of the properties of this material (and related vdW heterostructures) have been carried out using h-BN flakes mechanically exfoliated from small bulk crystals, whereas integration into practical devices will ultimately require h-BN layers synthesized at wafer scale. We are looking for a highly motivated PhD student to investigate the epitaxial growth of h-BN using molecular beam epitaxy (MBE). The overall goal is to realize thin films of h-BN with high structural perfection on different single crystal metal templates. This research will be developed in the context of a project in which PDI collaborates with external partners aiming at the fabrication of vdW heterostructures combining MBE grown h-BN with other 2D materials. Thus, the PhD student will have the opportunity to work in close collaboration with external European partners as well as highly experienced senior scientists from PDI.