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About the position

PhD student (m/f/d) -
Molecular Beam Epitaxy of AlN-Based Ultrawide-Bandgap Semiconductor Heterostructures

Al-rich (Al,Ga)N and AlN are ultra-wide bandgap (UWBG) semiconductors that have gained significant interest for next-generation RF power and UV light devices. Wurtzite group III-nitride semiconductor heterostructures exhibit strong spontaneous and piezoelectric polarization fields, reaching several MV/cm along the polar c-axis. Consequently, beyond conventional bandgap engineering, polarization engineering provides new opportunities for designing advanced photonic and electronic devices within these heterostructures.

In this project, the successful candidate will focus on designing and growing UWBG polar group III-nitride heterostructures using molecular beam epitaxy (MBE) for novel electronic devices that leverage polarization engineering. Compositionally graded alloy growth will be utilized to enhance doping efficiency and improve ohmic contact formation. Additionally, various growth conditions will be investigated to achieve reliable doping control in binary AlN. Ultimately, Al-rich (Al,Ga)N and AlN-based diodes and field-effect transistors will be grown, fabricated, and characterized.

 

Your responsibilities

  • Growth of nitride heterostructures by molecular beam epitaxy
  • Sample characterization by x-ray diffractometry, atomic force microscopy, and Hall-effect and C-V measurements
  • Band diagram simulation using 1D Poisson-Schrödinger solver
  • Active involvement of device fabrication and characterization
  • Data analysis and planning of experiments
  • Presentation of results at conferences and in publications

Your profile

  • Master degree in physics, electrical engineering, materials science, or a related field
  • Preferentially background in device physics or nanotechnology
  • Experience with device fabrication is advantageous

Position and salary

This position is available immediately , is limited to a 3-year period initially with the perspective of a 1-year extension.

Salary and benefits are according to the Treaty for German public service (TVöD Bund) to a level of E13 (75%).

What we offer

  • Modern laboratories with a wide range of experimental techniques
  • Supportive environment with experts for various scientific sub-fields and a low number of students per advisor
  • International and culturally diverse community
  • Location in the heart of Berlin with excellent public transport connections
  • a subsidized travel ticket
  • Possibility to participate in professional development and/or student exchange programs 

About PDI

The Paul-Drude-Institute is part of the Forschungsverbund Berlin e.V. and a member of the Leibniz Association. The institute carries out basic and applied research at the nexus of materials science, condensed matter physics, and device engineering.

In the Epitaxy department at PDI, a dedicated team of scientists, technicians, postdocs, and students operates 13 MBE systems for the synthesis of a wide range of material systems, including arsenides, nitrides, oxides, and 2D materials. This in-house collaborative environment offers abundant opportunities for both direct and indirect learning in various MBE technologies, making it an ideal place to start a career in the field.

For scientific information about the project, please contact Dr. Yongjin Cho at cho@pdi-berlin.de.

Inclusive & equal opportunity employer

With approximately 100 employees and more than 15 nationalities, PDI is committed to building a talented, inclusive, and culturally diverse workforce. We understand that our shared future is guided by basic principles of fairness and mutual respect.

As an equal opportunity and family-friendly employer, we offer highly flexible employment conditions, such as flexible working hours, parental leave, and home office, and we strive to create a family- and life-conscious working environment.

Among equally qualified applicants, preference will be given to candidates from marginalized groups. That means, we welcome every qualified application, regardless of sex and gender, origin, nationality, religion, belief, health and disabilities, age or sexual orientation.

PDI follow our gender equality plan, so we want to engage women* to apply at PDI to balance the gender ratio in science. Disabled applicants with equal qualification and aptitude will be given preferential consideration.

How to apply

Please upload your application by April 18, 2025. 
Your documents have to include

  • a dedicated cover letter
  • CV
  • diploma(s) and transcript(s)
  • contact information of two references
  • publication list (if present)