About the position
We are seeking a highly motivated and talented Postdoctoral researcher to join
our team on oxide semiconductors. The successful candidate will work in the project
“Oxide semiconductor material discovery by MBE” in close collaboration with
semiconductor industry. You will perform the growth of novel high-quality
semiconducting oxides by molecular beam epitaxy and investigate their anisotropic,
strain- and doping dependent key fundamental properties for thin-film transistor
applications (such as band gap, charge carrier mobility, and surface passivation).
Your research thus includes the basic structural, electrical, and electronic
characterization. This position offers an exciting opportunity to work at the
interface to semiconductor industry in a collaborative and innovative research environment.